PRPAK5x6
Model：FKBA4086、FKBA4204、FKBA3031、FKBA4905
If you have any question about product specification, Pls don’t hesitate to contact us. Thanks!
Add to inquiry
Specification
| FKBA4086 | 40V Single N RDS=1mΩ |
| FKBA4204 | 40V Dual N RDS=15mΩ |
| FKBA3031 | -30V Single P RDS=2.5mΩ |
| FKBA4905 | 40V N+P RDS=2.5mΩ |
GENERAL DESCRIPTION
It is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as notebook computer power management and other battery powered circuits where Low-side switching , and low in-line power loss are needed in a very small outline surface mount package