2X2 DFN
Model：FKCB2903、FKCD3014、FKCD3113、FKCB8236
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Specification
| FKCB2903 | 20V、N+P、RDS=40mΩ |
| FKCD3014 | 30V、Single N、RDS=12mΩ |
| FKCD3113 | -30V、Single P、RDS=32mΩ |
| FKCB8236 | 20V、Dual N、RDS=22mΩ |
GENERAL DESCRIPTION
It is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and lower power loss that are needed in a very small outline surface mount package.